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Homepage of Hong

Sung-Min Hong

 

Name

Sung-Min Hong

Date of birth

Born on August 2, 1978

Office Address

Room 2394, Building 35, Bundeswehr University, Neubiberg,

E-mail Address

hi2ska2@gmail.com

 

 

 

Current Research Interests

Deterministic solver for Boltzmann transport equation using the spherical harmonics expansion

Physics-based noise simulation of the semiconductor devices and the electronic circuits, especially in the large-signal operation.

Development of the device-circuit mixed-mode TCAD framework.

Development of the compact MOSFET model.

Development of the compact MOS 1/f noise model in the large-signal operation.

Algorithms for the phase noise simulation of oscillators.

Noise simulation of nanoscale devices based on the non-equilibrium Green’s function formalism

 

 

Education and Professional Positions

August 2007 ~ Present

Postdoctoral Researcher in Institute for Electronics, Bundeswehr University, Neubiberg, .

March 2007 ~ July 2007

Postdoctoral Researcher in NANO System Institute-National Core Research Center (NSI-NCRC), Seoul National University, Seoul, .

March 2001 ~ February 2007

Ph. D. in School of Electrical Engineering and Computer Science, Seoul National University, Seoul, .

Dissertation title: “Physics-based noise analysis of electronic circuits in large-signal operation.”

Advisors: Profs. Hong Shick Min and Young June Park.

March 1997 ~ February 2001

B. S. in School of Electrical Engineering, Seoul National University, Seoul, .

 

 

Research Experience

August 2007 ~ Present

DFG(German research foundation) research project “Deterministic simulation of fundamental transport and noise processes in semiconductors”

February 2005 ~ July 2007

Samsung research project “Semiconductor device modeling – Development of the CLESICO framework.”

May 2005 ~ July 2007

Samsung research project “Research on the CMOS image sensor photo cell.”

October 2005 ~ July 2007

International joint research project of NEDO grant with Hiroshima University, .

August 2001 ~ January 2002

Process equipment researcher of electron-beam lithography system in the Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, .

 

 

Publications in Journals

[1] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations of the terminal current Green’s functions and their application to derivation of the Nyquist theorem for multi-terminal semiconductor devices, ” accepted to Journal of Applied Physics, 2007.

[2] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, Hong Shick Min, “A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor,” accepted to IEEE Transactions on Electron Devices, 2007.

[3] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Physics-based analysis and simulation of phase noise in oscillators,” IEEE Transactions on Electron Devices, vol. 53, pp. 2195-2201, 2006.

[4] Raseong Kim, Sung-Min Hong, Young-June Park, and Hong Shick Min, “Harmonic balance analysis of MOSFET by using a new comprehensive quasi-2D model,” Journal of the Korean Physical Society, vol. 47, pp. S381-S386, 2005.

 

 

Publications in Conferences

[1] Sung-Min Hong, Hong-Hyun Park, Chan Hyeong Park, Myoung Jin Lee, Hong Shick Min, and Young June Park, “Physics-based simulation of 1/f noise in MOSFETs under large-signal operation,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 89-92, 2007.

[2] Hong-Hyun Park, Sung-Min Hong, Seonghoon Jin, Hong Shick Min, and Young June Park, “Noise simulation in nanoscale devices based on the non-equilibrium Green’s function formalism,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 445-448, 2007.

[3] Andrey Yu. Serov, Sung-Min Hong, Young June Park, and Hong Shick Min, “Surface-potential based compact model for quantum effects in planar and double-gate MOSFET,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 297-300, 2007.

[4] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, and Hong Shick Min, “Reliability studies on non planar DRAM cell transistor,International Reliability Physics Symposium, 2007.

[5] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, and Hong Shick Min, “Reliability studies on non planar DRAM cell transistor,Korean Conference on Semiconductors, 2007.

[6] Sung-Min Hong, Young June Park, and Hong Shick Min, “Physics-based simulation of 1/noise in MOSFET in large-signal operation and its application to compact modeling,” International Workshop on Compact Modeling, 2007.

[7] Sung-Min Hong, Chan Hyeong Park, Myoung Jin Lee, Hong Shick Min, and Young-June Park, “Physics-based phase noise analysis of CMOS RF oscillators,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 95-98, 2006.

[8] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young-June Park, “A physics-based phase noise analysis of CMOS RF oscillators,” Korean Conference on Semiconductors, pp. 821-822, 2006.

[9] Sung-Min Hong, Young-June Park, and Hong Shick Min, “Mixed-mode simulation of RF devices and circuits and its impact to compact model,” International Workshop on Compact Modeling, pp. 28-35, 2006.

[10] Sung-min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations of the Green’s functions for the short-circuit terminal noise currents in semiconductor devices,” International Conference on Noise and Fluctuations, pp. 787-790, 2005.

[11] Sung-Min Hong, Raseong Kim, Chan Hyeong Park, Hong Shick Min, and Young-June Park, “A physics-based TCAD framework for the noise analysis of RF CMOS circuits under the large-signal operation,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 119-122, 2005.

[12] Raseong Kim, Sung-min Hong, Chan Hyeong Park, Young-June Park, and Hong Shick Min, “Harmonic balance analysis of 90 nm nMOSFET using a new comprehensive quasi-2D model,” Silicon Nanoelectronics Workshop, pp. 74-75, 2005.

[13] Raseong Kim, Sung-min Hong, Chan Hyeong Park, Young-June Park, and Hong Shick Min, “A comprehensive quasi-2D model for harmonic balance analysis of MOSFET,” Korean Conference on Semiconductors, pp. 333-334, 2005.

[14] Sung-min Hong, Hong Shick Min, Chan Hyeong Park, and Young June Park, “Extension of the characteristic potential method for noise calculation and its application to shot noise in semiconductor devices,” Noise in Devices and Circuits, pp. 16-27, 2004.

[15] Seonghoon Jin, Sung-min Hong, Jongchol Kim, Young June Park, and Hong Shick Min, “Nonlocal transport and thermal noise of the nano scale MOSFET,” Noise in Devices and Circuits, pp. 74-83, 2004.

[16] Sung-min Hong, Hyunchul Nah, Seonghoon Jin, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations for the short-circuit current Green’s functions in semiconductor devices,” Korean Conference on Semiconductors, pp. 7-8, 2004.

[17] Hyunchul Nah, Sung-min Hong, Young June Park, and Hong Shick Min, “The physical and numerical implications of the noise modeling method: IFM, CPM, and ERS,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 75-78, 2003.

[18] Sung-min Hong, Yong-seok Kim, Hong Shick Min, and Young June Park, “Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region,” Noise in Devices and Circuits, pp. 267-281, 2003.

 

 

Last updated on October 5th, 2007