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Veröffentlichung Christoph Jungemann bevore 2006

Veröffentlichungen von Professor Christoph Jungemann bevor 2006

Bücher:

1. C. Jungemann: "Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren", Verlag Shaker: Aachen, 1995.

2. C. Jungemann, B. Meinerzhagen: "Hierarchical Device Simulation (The Monte-Carlo Perspective)", Springer Verlag: Wien, New York, 2003.

3. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Hydrodynamic Modeling of RF Noise for Silicon-Based Devices" in "ADVANCED DEVICE MODELING AND SIMULATION" , Editor: T. Grasser, World Scientific Publishing Co., 2003.

Journalartikel:

1. C. Jungemann, A. Emunds, W. L. Engl: "Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers", Solid-State Electron., 36, 1529-1540, 1993.

2. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dutton, W. L. Engl, R. Fauquembergue, C. Fiegna, M. V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J. M. Higman, T. Iizuka, C. Jungemann, Y.Kamakura, H. Kosina, T. Kunukiyo, S. E. Laux, H. Lin, C. Maziar, H. Mizuno, H. J. Peifer, S. Ramaswamy, N. Sano, P. G. Scrobohaci, S. Selberherr, M. Takenaka, T. Tang, J. L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S. Wang, X. Wang, C.Yao, P. D. Yoder, A. Yoshii: "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon", IEEE Trans. Electron Devices, 41, 1646-1654, 1994.

3. C. Jungemann, S. Keith, F. M. Bufler, B. Meinerzhagen: "Effects of band structure and phonon models on hot electron transport in silicon", Electrical Engineering, 79, 99-101, 1996.

4. C. Jungemann, R. Thoma, W. L. Engl: "A soft threshold lucky electron model for efficient and accurate numerical device simulation", Solid-State Electron., 39, 1079-1086, 1996.

5. C. Jungemann, S. Yamaguchi, H. Goto: "On the accuracy and efficiency of substrate current calculations for sub-µm n-MOSFET's", IEEE Electron Device Lett., 17, 464-466, 1996.

6. C. Jungemann, S. Decker, R. Thoma, W.-L. Engl, H. Goto: "Phase space multiple refresh: a general purpose statistical enhancement technique for Monte Carlo device simulation", IEEE J. Techno. Comp. Aided Design, (2), 1997.

7. C. Jungemann, S. Yamaguchi, H. Goto: " Convergence Estimation for Stationary Ensemble Monte Carlo Simulations ", IEEE J. Techno. Comp. Aided Design, (10), 1998.

8. C. Jungemann, B. Meinerzhagen, S. Decker, S.Keith, S. Yamaguchi, H. Goto: " Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible? ", Solid-State Electron., 42, 647-655, 1998.

9. H. Goto, S. Yamaguchi, C. Jungemann: "Inverse Modeling as a Basis for Predictive Device Simulation of Deep Sub-micron Metal-Oxide-Semiconductor Field Effect Transistors", Jap. J. Appl. Phys., 37, 5437-5443, 1998.

10. C. Jungemann, S. Keith, M. Bartels, B. Meinerzhagen: " Efficient Full-Band Monte Carlo Simulation of Silicon Devices", IEICE TRANS. ELECTRON., vol. E82-C, no. 6, pp. 870-879, 1999.

11. C. Jungemann, B. Meinerzhagen, M. Eller: " On the Number of Fast Interface States of Standard CMOS Technologies ", IEEE Electron Device Lett., vol. 20, no. 6, pp. 283-285, 1999.

12. C. Jungemann, D. Dudenbostel, B. Meinerzhagen: " Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling ", IEEE Trans. on Electron Devices, vol. 46, no. 8, pp. 1803-1804, 1999.

13. C. Jungemann, S. Keith, B. Meinerzhagen: " Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile", IEICE Trans. on Electronics, vol. E83C, no. 8, pp. 1228-1234, 2000.

14. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation" VLSI Design, vol. 13, nos. 1-4, pp. 281-285, 2001.

15. C. Jungemann, B. Meinerzhagen: " Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations " IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 985-992, 2001.

16. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Comparative Study of Electron Transit Times Evaluated by DD, HD, and MC Device Simulation for a SiGe HBT " IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2216-2220, 2001.

17. C. Jungemann, B. Meinerzhagen: " On the Applicability of Nonself-Consistent Monte Carlo Device Simulations " IEEE Trans. Electron Devices, vol. 49, no. 6, pp. 1072-1074, 2002.

18. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Hierarchical 2D DD and HD Noise Simulations of Si and SiGe Devices: Part I - Theory " IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1250-1257, 2002.

19. C. Jungemann, B. Neinhüs, S. Decker, B. Meinerzhagen: " Hierarchical 2D DD and HD Noise Simulations of Si and SiGe Devices: Part II - Results " IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1258-1264, 2002.

20. C. Jungemann, B. Meinerzhagen: " In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations " IEICE Trans. on Electronics, vol. E86-C, no. 3, pp. 314-319, 2003.

21. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Hydrodynamic Modeling of RF Noise for Silicon-Based Devices " Int. Journal of High Speed Electronics and Systems, vol. 13, no. 3, pp. 823-848, 2003.

22. B. Meinerzhagen, C. Jungemann, B. Neinhüs, M. Bartels: " Numerical Simulation of Strained Si/SiGe Devices: The Hierarchical Approach " Applied Surface Science, vol. 224, pp. 235-240, 2004.

23. M. Bartels, B. Neinhüs, C. Jungemann, B. Meinerzhagen: " Evaluation of Compact Noise Modeling for Si/SiGe HBTs based on Hierarchical Hydrodynamic Noise Simulation " Applied Surface Science, vol. 224, pp. 350-353, 2004.

24. C. Jungemann, N. Subba, J.-S. Goo, C. Riccobene, Q. Xiang, B. Meinerzhagen: " Investigation of Strained Si/SiGe Devices by MC Simulation " Solid-State Electron., vol. 48, no. 8, pp. 1417-1422, 2004.

25. C. Jungemann, B. Neinhüs, B. Meinerzhagen, R. W. Dutton: " Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation " IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 956-961, 2004.

26. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si_{1-x}Ge_x dual channel pMOSFETs on (001) Relaxed Si_{1-y}Ge_y" Journal of Computational Electronics, Vol. 3, pp. 193-197, 2004.

27. C. Jungemann, B. Meinerzhagen: " A Legendre Polynomial Solver for the Langevin Boltzmann Equation" Journal of Computational Electronics, Vol. 3, pp. 157-160, 2004.

28. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr: " A Non-Parabolic Six Moments Model for the Simulation of sub-100nm Semiconductor Devices" Journal of Computational Electronics, Vol. 3, pp. 183-187, 2004.

29. K. Gopalakrishnan, R. Woo, C. Jungemann, P. B. Griffin, J. D. Plummer: " Impact Ionization MOS (I-MOS) ---Part II: Experimental Results " IEEE Trans. Electron Devices, Vol. 52, pp. 77-84, 2005.

30. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Study of charge carrier quantization in strained Si-nMOSFETs" Materials Science in Semiconductor Processing, vol. 8, pp. 363-366, 2005.

31. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr: " Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data " Journal of Applied Physics, vol. 97, pp. 093710, 2005.

32. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: " Failure of Moments-Based Transport Models in Nanoscale Devices near Equilibrium " IEEE Trans. Electron Devices, Vol. 52, pp. 2404-2408, 2005.

Konferenzbeiträge:

1. A. Emunds, C. Jungemann, W. L. Engl: "A consistent model for low and high-field electron transport in homogeneous silicon inversion layers", in International Conference on Solid State Devices and Materials, 462-464, Yokohama,Japan, 1991.

2. C. Jungemann, R. Thoma, M. Ekel, W. L. Engl: "An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage", in HCIS Abstracts, Oxford, August 1993.

3. C. Jungemann, P. Graf, G. Zylka, R. Thoma, W. L. Engl: "New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTE's Green's function", in Proc. IWCE, 45-48, Portland, Oregon, May 1994.

4. I. Bork, C. Jungemann, B. Meinerzhagen, W. L. Engl: "Influence of heat flux on the accuracy of hydrodynamic models for ultrashort Si MOSFETs", in NUPAD Tech. Dig., Honolulu, 1994.

5. C. Jungemann, S. Keith, B. Meinerzhagen, W. L. Engl: "On the influence of bandstructure and scattering rates on hot electron modeling", in Proc. SISDEP, 6, 222-225, Erlangen, 1995.

6. C. Jungemann, R. Thoma, B. Meinerzhagen, W. L. Engl: "A soft threshhold lucky electron model improved for device simulations under low voltage conditions", in ICVC, 211-214, Seoul, 1995.

7. C. Jungemann, S. Decker, R. Thoma, W. L. Engl, H. Goto: "Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo simulation", in Proc. SISPAD, 1, 65-66, 1996.

8. C. Jungemann, S. Yamaguchi, H. Goto: "Accurate prediction of hot-carrier effects for a deep sub-µm CMOS technology based on inverse modeling and full band Monte Carlo device simulation", in Proc. SISPAD, 1, 59-60, 1996.

9. C. Jungemann, S. Yamaguchi, H. Goto: "Efficient full band Monte Carlo hot carrier simulation for silicon devices", in Proc. ESSDERC, 26, 821-824, Bologna, 1996.

10. C. Jungemann, S. Yamaguchi, H. Goto: "Is there experimental evidence for a difference between surface and bulk impact ionization in silicon", in IEDM Tech. Dig., 383-386, 1996.

11. B. Meinerzhagen, C. Jungemann, S. Decker, S. Keith, S. Yamaguchi, H. Goto: "Predictive and efficient modeling of substrate currents in n-channel MOS-transistors", in International Symposium on VLSI Technology, Systems and Applications, 14, 232-235, Taipei, 1997.

12. C. Jungemann, S. Yamaguchi, H. Goto: "Convergence estimation for stationary ensemble Monte Carlo simulations", in Proc. SISPAD, 2, 209-212, Cambridge, MA, 1997.

13. C. Jungemann, S. Yamaguchi, H. Goto: "Investigation of the influence of impact ionization feedback on the spatial distribution of hot carriers in an NMOSFET", in Proc. ESSDERC, 27, 336-339, Stuttgart, 1997.

14. S. Yamaguchi, C. Jungemann, H. Goto: "High Performance Full-Band Monte Carlo Device Simulator FALCON", presented at: The 44th Spring Meeting of the Japan Society of Applied Physics, 1997.

15. P. Graf, F. M. Bufler, B. Meinerzhagen, C. Jungemann: "A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs", IEDM, 881-884, Washington, 1997.

16. H. Kanata, C. Jungemann, S. Satoh: "Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator", in Proc. Silicon Device Meeting, NTT, Atsugi, 1997 (in Japanese).

17. C. Jungemann, B. Meinerzhagen: "On the modeling of CV data for state of the art CMOS technologies: Do we need to include fast interface states?", in Proc. SISPAD, 2, 227-230, Leuven, 1998.

18. S. Keith, C. Jungemann, B. Meinerzhagen: "Full band Monte Carlo device simulation of 0.1-0.5µm strained-Si p-MOSFETs", Proc. ESSDERC, 28, 312-315, Bordeaux, 1998.

19. C. Jungemann, M. Bartels, S. Keith, B. Meinerzhagen: "Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure", in Proc. IWCE, Osaka, 104-107, 1998.

20. C. Jungemann, S. Keith, B. Meinerzhagen: "Full-Band Monte Carlo Simulation of a 0.12µm-Si-PMOSFET with and without a Strained SiGe-Channel", Tech. Dig. IEDM, San Francisco, 897-900, 1998.

21. C. Jungemann, S. Keith, B. Meinerzhagen: " Noise Properties and Efficiency of Terminal Current Estimators for Monte Carlo Simulation of Semiconductor Devices", Second IMACS Seminar on Monte Carlo Methods, Varna, Bulgaria, IMACS20, 1999.

22. Dirk Dudenbostel, C. Marschner, C. Jungemann, R. Laur: "A Novel CMOS Magnetic Sensor Micro System with Integrated Micro Coils and Temperature Sensor for Offset Calibration", in Tech. Dig Transducers'99, Sendai, Japan, pp. 176-179, June 1999.

23. S. Keith, C. Jungemann, S. Decker, B. Neinhüs, M. Bartels, B. Meinerzhagen: "Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile", Proc. SISPAD, 219-222, Kyoto, 1999.

24. C. Jungemann, B. Meinerzhagen: "Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm", Proc. ESSDERC, 29, 236-239, Leuven, 1999.

25. S. Decker, B. Neinhüs, B. Heinemann, C. Jungemann, B. Meinerzhagen: "Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockley's Impedance Field Method and the Hydrodynamic Model", MSM, 364-367, San Diego, 2000.

26. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation" IWCE, 96-97, Glasgow, 2000.

27. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation" SISPAD, 42-45, Seattle, 2000.

28. B. Neinhüs, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: "A CPU efficient electron mobility model for MOSFET simulation with quantum corrected charge densities" ESSDERC, 332-335, Cork, 2000.

29. C. Jungemann, B. Meinerzhagen: "Efficiency and stochastic error of Monte Carlo device simulations" IEDM, 101-104, San Francisco, 2000.

30. C. Jungemann, B. Heinemann, K. Tittelbach-Helmrich, B. Meinerzhagen: "An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe" IEDM, 109-112, San Francisco, 2000.

31. C. Jungemann, C. D. Nguyen, B. Neinhüs, B. Meinerzhagen: "Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs" MSM, 458-461, Hilton Head Island, 2001.

32. C. Jungemann, D. Grgec, B. Meinerzhagen: "A Methodology for Consistent MC, HD and DD Simulations of Submicrometer NMOSFETs" Proc. MIPRO, Croatia, 14-17, 2001.

33. S. Decker, C. Jungemann, B. Neinhüs, B. Meinerzhagen: "An accurate and efficient methodology for RF noise simulation on nm-scale MOSFETs based on a Langevin-type drift-diffusion model" Proc. ICNF, USA, 659-662, 2001.

34. S. Decker, C. Jungemann, B. Neinhüs, B. Meinerzhagen: "2D RF Noise Simulations Based on a Langevin-Type Drift-Diffusion Model and FB-MC Generated Local Noise Sources" SISPAD, 136-139, Springer (Wien, New York), 2001.

35. C. Jungemann, B. Meinerzhagen: "Modeling of the Stochastic Noise of Monte Carlo Device Simulations" IMACS-MCM, 56-57, Salzburg, 2001.

36. C. Jungemann, B. Neinhüs, S. Decker, B. Meinerzhagen: " Hierarchical 2D RF Noise Simulation of Si and SiGe Devices by Langevin-type DD and HD Models based on MC Generated Noise Parameters " IEDM, 481-484, Washington, 2001.

37. B. Neinhüs, C. Jungemann, B. Meinerzhagen: " DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations " MSM 2002, 548-551, Puerto Rico, 2002.

38. C. D. Nguyen, C. Jungemann, B. Neinhüs, S. Hackenbuchner, B. Meinerzhagen: " Entwicklung eines Modells für die recheneffiziente, näherungsweise quantenmechanische Bestimmung der Löcherdichte im Inversionskanal eines pMOSFETs " Analog 2002, GMM-Fachbericht, Band 38, pp. 241-245, 2002, VDE-Verlag.

39. D. Grgec, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: " Quantum Correction of Electron Density for Monte Carlo Device Simulation " Analog 2002, GMM-Fachbericht, Band 38, pp. 359-361, 2002, VDE-Verlag.

40. M. Bartels, B. Neinhüs, C. Jungemann, S. Decker, B. Meinerzhagen: " Numerische Simulation des Rauschverhaltens eines Si/SiGe-Heterobipolartransistors basierend auf der Hierarchischen Numerischen Bauelementsimulation " Analog 2002, GMM-Fachbericht, Band 38, pp. 47-52, 2002, VDE-Verlag.

41. B. Meinerzhagen, C. Jungemann, B. Neinhüs, M. Bartels: " Hierarchical Numerical Simulation exemplified for SiGe Heterojunction Bipolar Transistors " Analog 2002, GMM-Fachbericht, Band 38, pp. 15-20, 2002, VDE-Verlag.

42. C. Jungemann, B. Meinerzhagen: " In-Advance CPU Time Analysis for Monte Carlo Device Simulations " SISPAD, 103-106, Kobe (Japan) 2002.

43. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation " ESSDERC, 71-74, Firenze, Italy, 2002.

44. D. Grgec, M. I. Vexler, C. Jungemann, B. Meinerzhagen: " Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures " ESSDERC, 179-182, Firenze, Italy, 2002.

45. A. J. Scholten, L. F. Tiemeijer, R. van Langevelde, R. J. Havens, V. A. Venezia, A. T. A. Zegers-van Duijnhoven, B. Neinhüs, C. Jungemann, D. B. M. Klaassen: " Compact modeling of drain and gate current noise for RF CMOS " IEDM, 129-132, San Francisco, USA, 2002.

46. M. Bartels, B. Neinhüs, C. Jungemann, B. Meinerzhagen: " Evaluation of Compact Noise Modeling for Si/SiGe HBTs Based on Hierarchical Hydrodynamic Noise Simulation " Proceedings of ISTDM, pp. 77--78, Nagoya, Japan, 2003.

47. B. Meinerzhagen, C. Jungemann, B. Neinhüs, and M. Bartels: " Numerical Simulation of Strained Si/SiGe Devices: The Hierarchical Approach " Proceedings of ISTDM, pp. 103--104, Nagoya, Japan, 2003.

48. C. D. Nguyen, C. Jungemann, B. Neinhüs, B. Meinerzhagen, J. Sedlmeir and W. Molzer: " Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale pMOSFETs " Technical Proceedings of the NANOTECH, 56-59, San Fransisco, USA, 2003.

49. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " On the Diffusion Noise Sources of the Impedance Field Method " Proceedings of ICNF, pp. 636-639, Prague, Czech Republic, 2003.

50. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " A Simple Compact Model for Terminal Current Noise of SiGe HBTs " Proceedings of ICNF, pp. 636-639, Prague, Czech Republic, 2003.

51. C. Jungemann, B. Meinerzhagen: " Maximum Drive Current Scaling Properties of Strained Si NMOS in the Deca--Nanometer Regime " Proceedings of SISPAD, pp. 191-194, Boston, USA, 2003.

52. Tae-Young Oh, C. Jungemann, and R. W. Dutton " Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs " Proceedings of SISPAD, pp. 87-90, Boston, USA, 2003.

53. C. Jungemann, B. Meinerzhagen: " MC Simulation of Strained Si/SiGe Devices " Proceedings of ESSDERC, pp. 9-14, Estoril, Portugal, 2003.

54. C. Jungemann, B. Neinhüs, C. D. Nguyen, B. Meinerzhagen, R. W. Dutton, A. J. Scholten, and L. F. Tiemeijer " Hydrodynamic Modeling of RF Noise in CMOS Devices " IEDM, pp. 871-874, Washington, USA, 2003.

55. T. Krishnamohan, C. Jungemann, and K. C. Saraswat " A novel, very high performance, sub-20nm Depletion-Mode Double-Gate (DMDG) Si/Si{x}Ge{1-x}/Si channel PMOSFET " IEDM, pp. 687-690, Washington, USA, 2003.

56. C. Jungemann, B. Neinhüs, B. Meinerzhagen, R. W. Dutton " Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation " FaN04, Proceedings of SPIE, Noise in Devices and Circuits II, pp. 173-184, Gran Canaria, Spain, 2004.

57. R. Navid, C. Jungemann, T. H. Lee, R. W. Dutton " Close-in phase noise in electrical oscillators " FaN04, Proceedings of SPIE, Gran Canaria, Spain, 2004.

58. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen " Study of Charge Carrier Quantization in Strained Si-nMOSFETs " Proceedings of ISTDM, pp. 83-84, Frankfurt (Oder), Germany, 2004.

59. C. Ni Chleirigh, C. Jungemann, J. Jung, O. O. Olubuyide, J. L. Hoyt " Extraction of band offsets in Strained Si/Strained SiGe on relaxed SiGe dual-channel enhanced mobility structures" SiGe Materials, Processing and Devices Symposium, Hawai, 2004.

60. C. Jungemann, B. Neinhüs, C. D. Nguyen, B. Meinerzhagen " Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation " SISPAD, pp. 235-238, MUNICH, 2004.

61. T. Krishnamohan, C. Jungemann, K. Saraswat " Very High Performance, Sub-20nm, Strained Si and SiGe, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs " SISPAD, pp. 191-194, MUNICH, 2004.

62. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, and S. Selberherr " Advanced Transport Models for Sub-Micrometer Devices " SISPAD, pp. 1-8, MUNICH, 2004.

63. C. Jungemann, B. Neinhüs, B. Meinerzhagen " Noise Modeling of Si and SiGe Devices " ICSICT, vol. 2, pp. 1112-1117, Beijing, 2004.

64. D. Grgec, C. Jungemann, C. D. Nguyen, B. Neinhüs, B. Meinerzhagen " An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation " ICSICT, vol. 2, pp. 991-994, Beijing, 2004.

65. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si1-xGex dual channel pMOSFETs on (001) Relaxed Si1-yGey " IWCE Abstracts, pp. 40-41, Purdue, 2004.

66. C. Jungemann, B. Meinerzhagen " A Legendre Polynomial Solver for the Langevin Boltzmann Equation " IWCE Abstracts, pp. 22-23, Purdue, 2004.

67. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr " A Bulk Monte Carlo Based Six Moments Model for the Simulation of sub-100nm Semiconductor Devices " IWCE Abstracts, pp. 36-37, Purdue, 2004.

68. C. Jungemann, B. Neinhüs, B. Meinerzhagen "Noise modeling in scaled MOSFET devices" ULIS, pp. 41-44, Bologna, 2005.

69. C. Jungemann, B. Meinerzhagen "Über die Vernachlässigung von Beschleunigungseffekten in der Simulation von Siliziumbauelementen" ANALOG'05, GMM-Fachbericht 46, pp. 59-63, Hannover, 2005.

70. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen " Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium " Technical Proceedings of the NANOTECH(Vol. 3), pp. 25-28 , Anaheim, 2005.

71. C.D. Nguyen, C. Jungemann, B. Meinerzhagen " Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation " Technical Proceedings of the NANOTECH(Vol. 3), pp. 33-36 , Anaheim, 2005.

72. C. Jungemann, B. Meinerzhagen " Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative " LSSC, Sozopol (Bulgaria), 2005 (LSSC 2005, Springer Verlag Berlin Heidelberg, LNCS 3743, pp. 164-171, 2006).

73. B. Neinhüs, C. Jungemann, B. Meinerzhagen " Comparative Hierarchical Numerical Noise Simulations of a pnp and npn-type SiGe HBT " FaN05, Proceedings of SPIE, vol. 5844, pp. 150-157, Austin, 2005.

74. C. Jungemann, B. Meinerzhagen "A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation" ICNF, pp. 777-782, Salamanca, 2005.

75. C. Jungemann, B. Meinerzhagen "On the high frequency limit of the impedance field method for Si" ICNF, pp. 799-802, Salamanca, 2005.

76. C. Jungemann, M. Bollhöfer, B. Meinerzhagen "Convergence of the Legendre Polynomial Expansion of the Boltzmann Equation for Nanoscale Devices" ESSDERC, pp. 341-344, Grenoble, 2005.

77. C. Jungemann, B. Meinerzhagen "Do Hot Electrons Produce Excess Noise?" ESSDERC, pp. 329-332, Grenoble, 2005.

78. A.T. Pham, C.D. Nguyen, C. Jungemann, B. Meinerzhagen " A Semiempirical Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs" ESSDERC, pp. 293-296, Grenoble, 2005.

79. C.D. Nguyen, A.T. Pham, C. Jungemann, B. Meinerzhagen " Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs " TECHCON Abstracts, pp. 157, Portland (USA), 2005.